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|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transfer characteristics v ds = 25v pulse test typ tc = - 55 c 25 c 100 c 150 c gate-source voltage v gs [v] drain current i d [a] static drain-source on-state resistance 0.1 1 -50 0 50 100 150 2SK2197 v gs = 10v pulse test typ i d = 10a case temperature tc [ c] static drain-source on-state resistance r ds(on) [ w ] gate threshold voltage 0 1 2 3 4 5 -50 0 50 100 150 2SK2197 v ds = 10v i d = 1ma typ case temperature tc [ c] gate threshold voltage v th [v] safe operating area 0.01 0.1 1 10 100 1 10 100 1000 2SK2197 100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc drain-source voltage v ds [v] drain current i d [a] r ds(on) limit 0.01 0.1 1 10 100 2SK2197 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 transient thermal impedance time t [s] transient thermal impedance q jc(t) [ c/w] capacitance 10 100 1000 10000 0 20 40 60 80 100 2SK2197 0.005 tc=25 c typ ciss coss crss drain-source voltage v ds [v] capacitance ciss coss crss [pf] 0 20 40 60 80 100 0 50 100 150 2SK2197 power derating power derating [%] case temperature tc [ c] 0 100 200 300 400 500 0 20 40 60 80 100 120 2SK2197 0 5 10 15 20 200v gate charge characteristics i d = 20a 100v v dd = 400v v gs v ds gate charge qg [nc] drain-source voltage v ds [v] gate-source voltage v gs [v] |
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